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SSR1N60BTM_F080

SSR1N60BTM_F080

For Reference Only

Part Number SSR1N60BTM_F080
PNEDA Part # SSR1N60BTM_F080
Description MOSFET N-CH 600V 0.9A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,950
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SSR1N60BTM_F080 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberSSR1N60BTM_F080
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SSR1N60BTM_F080, SSR1N60BTM_F080 Datasheet (Total Pages: 9, Size: 705.8 KB)
PDFSSR1N60BTM_F080 Datasheet Cover
SSR1N60BTM_F080 Datasheet Page 2 SSR1N60BTM_F080 Datasheet Page 3 SSR1N60BTM_F080 Datasheet Page 4 SSR1N60BTM_F080 Datasheet Page 5 SSR1N60BTM_F080 Datasheet Page 6 SSR1N60BTM_F080 Datasheet Page 7 SSR1N60BTM_F080 Datasheet Page 8 SSR1N60BTM_F080 Datasheet Page 9

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SSR1N60BTM_F080 Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C900mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs12Ohm @ 450mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.7nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds215pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 28W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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