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IXFT320N10T2

IXFT320N10T2

For Reference Only

Part Number IXFT320N10T2
PNEDA Part # IXFT320N10T2
Description MOSFET N-CH 100V 320A TO-26
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,994
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFT320N10T2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFT320N10T2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFT320N10T2, IXFT320N10T2 Datasheet (Total Pages: 6, Size: 185.74 KB)
PDFIXFT320N10T2 Datasheet Cover
IXFT320N10T2 Datasheet Page 2 IXFT320N10T2 Datasheet Page 3 IXFT320N10T2 Datasheet Page 4 IXFT320N10T2 Datasheet Page 5 IXFT320N10T2 Datasheet Page 6

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IXFT320N10T2 Specifications

ManufacturerIXYS
SeriesGigaMOS™, HiPerFET™, TrenchT2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C320A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs430nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds26000pF @ 25V
FET Feature-
Power Dissipation (Max)1000W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-268
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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