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IXFT30N50Q3

IXFT30N50Q3

For Reference Only

Part Number IXFT30N50Q3
PNEDA Part # IXFT30N50Q3
Description MOSFET N-CH 500V 30A TO-268
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,686
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFT30N50Q3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFT30N50Q3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFT30N50Q3, IXFT30N50Q3 Datasheet (Total Pages: 5, Size: 132.89 KB)
PDFIXFT30N50Q3 Datasheet Cover
IXFT30N50Q3 Datasheet Page 2 IXFT30N50Q3 Datasheet Page 3 IXFT30N50Q3 Datasheet Page 4 IXFT30N50Q3 Datasheet Page 5

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IXFT30N50Q3 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs200mOhm @ 15A, 10V
Vgs(th) (Max) @ Id6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs62nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3200pF @ 25V
FET Feature-
Power Dissipation (Max)690W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-268
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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