IXFC20N80P Datasheet
|
Manufacturer IXYS Series HiPerFET™, PolarHT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 500mOhm @ 10A, 10V Vgs(th) (Max) @ Id 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 4680pF @ 25V FET Feature - Power Dissipation (Max) 166W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS220™ Package / Case ISOPLUS220™ |
Manufacturer IXYS Series HiPerFET™, PolarHT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 500mOhm @ 10A, 10V Vgs(th) (Max) @ Id 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 4680pF @ 25V FET Feature - Power Dissipation (Max) 166W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS247™ Package / Case ISOPLUS247™ |
