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IXFR102N30P

IXFR102N30P

For Reference Only

Part Number IXFR102N30P
PNEDA Part # IXFR102N30P
Description MOSFET N-CH 300V 60A ISOPLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,066
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFR102N30P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFR102N30P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFR102N30P, IXFR102N30P Datasheet (Total Pages: 5, Size: 151.76 KB)
PDFIXFR102N30P Datasheet Cover
IXFR102N30P Datasheet Page 2 IXFR102N30P Datasheet Page 3 IXFR102N30P Datasheet Page 4 IXFR102N30P Datasheet Page 5

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IXFR102N30P Specifications

ManufacturerIXYS
SeriesPolarHT™ HiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs36mOhm @ 51A, 10V
Vgs(th) (Max) @ Id5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs224nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7500pF @ 25V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOPLUS247™
Package / CaseISOPLUS247™

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