IXFR102N30P Datasheet
IXFR102N30P Datasheet
Total Pages: 5
Size: 151.76 KB
IXYS
This datasheet covers 1 part numbers:
IXFR102N30P
|
Manufacturer IXYS Series PolarHT™ HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 300V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 36mOhm @ 51A, 10V Vgs(th) (Max) @ Id 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 224nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7500pF @ 25V FET Feature - Power Dissipation (Max) 250W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS247™ Package / Case ISOPLUS247™ |
