Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXFP3N80

IXFP3N80

For Reference Only

Part Number IXFP3N80
PNEDA Part # IXFP3N80
Description MOSFET N-CH 800V 3.6A TO-220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,496
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 17 - Nov 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFP3N80 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFP3N80
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFP3N80, IXFP3N80 Datasheet (Total Pages: 2, Size: 93.36 KB)
PDFIXFA3N80 Datasheet Cover
IXFA3N80 Datasheet Page 2

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXFP3N80 Datasheet
  • where to find IXFP3N80
  • IXYS

  • IXYS IXFP3N80
  • IXFP3N80 PDF Datasheet
  • IXFP3N80 Stock

  • IXFP3N80 Pinout
  • Datasheet IXFP3N80
  • IXFP3N80 Supplier

  • IXYS Distributor
  • IXFP3N80 Price
  • IXFP3N80 Distributor

IXFP3N80 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs24nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds685pF @ 25V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

FDMC86248

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

3.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

90mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id

4V @ 250mA

Gate Charge (Qg) (Max) @ Vgs

9nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

525pF @ 75V

FET Feature

-

Power Dissipation (Max)

2.3W (Ta), 36W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Power33

Package / Case

8-PowerTDFN

SPI15N60CFDHKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

13.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

330mOhm @ 9.4A, 10V

Vgs(th) (Max) @ Id

5V @ 750µA

Gate Charge (Qg) (Max) @ Vgs

84nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1820pF @ 25V

FET Feature

-

Power Dissipation (Max)

156W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3-1

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

AOD296A

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

TO-252

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

AOTF27S60L

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

aMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

27A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

160mOhm @ 13.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1294pF @ 100V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3F

Package / Case

TO-220-3 Full Pack

IRF530SPBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

160mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

670pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 88W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D²Pak)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

1SS355VMTE-17

1SS355VMTE-17

Rohm Semiconductor

DIODE GEN PURP 80V 100MA UMD2

EX-11EB

EX-11EB

Panasonic Industrial Automation Sales

SENSOR THROUGH-BEAM 15CM NPN

C8051F326-GM

C8051F326-GM

Silicon Labs

IC MCU 8BIT 16KB FLASH 28QFN

MAX3162EAI

MAX3162EAI

Maxim Integrated

IC TRANSCEIVER FULL 2/2 28SSOP

NL453232T-3R3J-PF

NL453232T-3R3J-PF

TDK

FIXED IND 3.3UH 355MA 800 MOHM

STM8S003F3P6

STM8S003F3P6

STMicroelectronics

IC MCU 8BIT 8KB FLASH 20TSSOP

B350B-13-F

B350B-13-F

Diodes Incorporated

DIODE SCHOTTKY 50V 3A SMB

RO-1212S

RO-1212S

Recom Power

DC DC CONVERTER 12V 1W

AMT102-V

AMT102-V

CUI

ROTARY ENCODER INCREMENT PROGPPR

WSL2010R0160FEA

WSL2010R0160FEA

Vishay Dale

WSL-2010 .016 1% EA E3

L5973ADTR

L5973ADTR

STMicroelectronics

IC REG BUCK ADJUSTABLE 2A 8HSOP

UUX1E470MCL1GS

UUX1E470MCL1GS

Nichicon

CAP ALUM 47UF 20% 25V SMD