IXFN50N120SIC Datasheet
IXFN50N120SIC Datasheet
Total Pages: 7
Size: 467.06 KB
IXYS
This datasheet covers 1 part numbers:
IXFN50N120SIC
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Manufacturer IXYS Series - FET Type N-Channel Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 47A (Tc) Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, Vgs 50mOhm @ 40A, 20V Vgs(th) (Max) @ Id 2.2V @ 2mA Gate Charge (Qg) (Max) @ Vgs 100nC @ 20V Vgs (Max) +20V, -5V Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 1000V FET Feature - Power Dissipation (Max) - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |
