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IXFN24N100

IXFN24N100

For Reference Only

Part Number IXFN24N100
PNEDA Part # IXFN24N100
Description MOSFET N-CH 1KV 24A SOT-227B
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,506
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN24N100 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN24N100
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN24N100, IXFN24N100 Datasheet (Total Pages: 4, Size: 108.32 KB)
PDFIXFN24N100 Datasheet Cover
IXFN24N100 Datasheet Page 2 IXFN24N100 Datasheet Page 3 IXFN24N100 Datasheet Page 4

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IXFN24N100 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs390mOhm @ 12A, 10V
Vgs(th) (Max) @ Id5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs267nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8700pF @ 25V
FET Feature-
Power Dissipation (Max)568W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Vgs (Max)

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Input Capacitance (Ciss) (Max) @ Vds

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ON Semiconductor

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Vgs (Max)

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Input Capacitance (Ciss) (Max) @ Vds

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