Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRL3714ZS

IRL3714ZS

For Reference Only

Part Number IRL3714ZS
PNEDA Part # IRL3714ZS
Description MOSFET N-CH 20V 36A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,824
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRL3714ZS Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRL3714ZS
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRL3714ZS, IRL3714ZS Datasheet (Total Pages: 13, Size: 369.99 KB)
PDFIRL3714ZSTRL Datasheet Cover
IRL3714ZSTRL Datasheet Page 2 IRL3714ZSTRL Datasheet Page 3 IRL3714ZSTRL Datasheet Page 4 IRL3714ZSTRL Datasheet Page 5 IRL3714ZSTRL Datasheet Page 6 IRL3714ZSTRL Datasheet Page 7 IRL3714ZSTRL Datasheet Page 8 IRL3714ZSTRL Datasheet Page 9 IRL3714ZSTRL Datasheet Page 10 IRL3714ZSTRL Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRL3714ZS Datasheet
  • where to find IRL3714ZS
  • Infineon Technologies

  • Infineon Technologies IRL3714ZS
  • IRL3714ZS PDF Datasheet
  • IRL3714ZS Stock

  • IRL3714ZS Pinout
  • Datasheet IRL3714ZS
  • IRL3714ZS Supplier

  • Infineon Technologies Distributor
  • IRL3714ZS Price
  • IRL3714ZS Distributor

IRL3714ZS Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs16mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.2nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds550pF @ 10V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

SQP50N06-09L_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

72nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3065pF @ 25V

FET Feature

-

Power Dissipation (Max)

136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

AO3420

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 10V

Rds On (Max) @ Id, Vgs

24mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

8.8nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

630pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.4W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3L

Package / Case

TO-236-3, SC-59, SOT-23-3

STF11N65M5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ V

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

480mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

644pF @ 100V

FET Feature

-

Power Dissipation (Max)

25W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack

FDMC86116LZ

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

3.3A (Ta), 7.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

103mOhm @ 3.3A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

310pF @ 50V

FET Feature

-

Power Dissipation (Max)

2.3W (Ta), 19W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-MLP (3.3x3.3)

Package / Case

8-PowerWDFN

TN2510N8-G

Microchip Technology

Manufacturer

Microchip Technology

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

730mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

3V, 10V

Rds On (Max) @ Id, Vgs

1.5Ohm @ 750mA, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

125pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-243AA (SOT-89)

Package / Case

TO-243AA

Recently Sold

MAX1681ESA

MAX1681ESA

Maxim Integrated

IC REG CHARGE PUMP INV 8SOIC

TJA1052IT/5Y

TJA1052IT/5Y

NXP

DGTL ISOLATOR 5KV 2CH CAN 16SO

TIP42CTU

TIP42CTU

ON Semiconductor

TRANS PNP 100V 6A TO-220

TAJE107M025RNJ

TAJE107M025RNJ

CAP TANT 100UF 20% 25V 2917

SMCJ70CA-E3/57T

SMCJ70CA-E3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 70V 113V DO214AB

PDB-C134

PDB-C134

Advanced Photonix

SENSOR PHOTODIODE 950NM RADIAL

PCMB063T-3R3MS

PCMB063T-3R3MS

Susumu

FIXED IND 3.3UH 6A 30 MOHM SMD

AD8421ARMZ-R7

AD8421ARMZ-R7

Analog Devices

IC INST AMP 1 CIRCUIT 8MSOP

AP1533SG-13

AP1533SG-13

Diodes Incorporated

IC REG BUCK ADJUSTABLE 1.8A 8SOP

SR1LARU

SR1LARU

STMicroelectronics

IC SMART RESET 4PIN 6.0S 6UDFN

IS42S16160J-6BLI

IS42S16160J-6BLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 256M PARALLEL 54TFBGA

MMBF170

MMBF170

ON Semiconductor

MOSFET N-CH 60V 500MA SOT-23