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IXFN20N120

IXFN20N120

For Reference Only

Part Number IXFN20N120
PNEDA Part # IXFN20N120
Description MOSFET N-CH 1200V 20A SOT-227B
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,544
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN20N120 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN20N120
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN20N120, IXFN20N120 Datasheet (Total Pages: 4, Size: 566.68 KB)
PDFIXFN20N120 Datasheet Cover
IXFN20N120 Datasheet Page 2 IXFN20N120 Datasheet Page 3 IXFN20N120 Datasheet Page 4

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IXFN20N120 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs750mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs160nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds7400pF @ 25V
FET Feature-
Power Dissipation (Max)780W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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