IXFN20N120 Datasheet
IXFN20N120 Datasheet
Total Pages: 4
Size: 566.68 KB
IXYS
This datasheet covers 1 part numbers:
IXFN20N120
|
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 750mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 7400pF @ 25V FET Feature - Power Dissipation (Max) 780W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |
