Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXFK210N17T

IXFK210N17T

For Reference Only

Part Number IXFK210N17T
PNEDA Part # IXFK210N17T
Description MOSFET N-CH 170V 210A TO-264
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,010
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFK210N17T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFK210N17T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFK210N17T, IXFK210N17T Datasheet (Total Pages: 5, Size: 117.73 KB)
PDFIXFX210N17T Datasheet Cover
IXFX210N17T Datasheet Page 2 IXFX210N17T Datasheet Page 3 IXFX210N17T Datasheet Page 4 IXFX210N17T Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXFK210N17T Datasheet
  • where to find IXFK210N17T
  • IXYS

  • IXYS IXFK210N17T
  • IXFK210N17T PDF Datasheet
  • IXFK210N17T Stock

  • IXFK210N17T Pinout
  • Datasheet IXFK210N17T
  • IXFK210N17T Supplier

  • IXYS Distributor
  • IXFK210N17T Price
  • IXFK210N17T Distributor

IXFK210N17T Specifications

ManufacturerIXYS
SeriesGigaMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)170V
Current - Continuous Drain (Id) @ 25°C210A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs285nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds18800pF @ 25V
FET Feature-
Power Dissipation (Max)1150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-264AA (IXFK)
Package / CaseTO-264-3, TO-264AA

The Products You May Be Interested In

EFC6604R-A-TR

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-EFCP (1.9x1.46)

Package / Case

6-XFBGA

SI4812BDY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

LITTLE FOOT®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

7.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

16mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.4W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

IPP023NE7N3GXKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.3mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

3.8V @ 273µA

Gate Charge (Qg) (Max) @ Vgs

206nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

14400pF @ 37.5V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

IRFC4115ED

Infineon Technologies

Manufacturer

Infineon Technologies

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

IPP50R399CPHKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

560V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

399mOhm @ 4.9A, 10V

Vgs(th) (Max) @ Id

3.5V @ 330µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

890pF @ 100V

FET Feature

-

Power Dissipation (Max)

83W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

Recently Sold

HX1188NLT

HX1188NLT

Pulse Electronics Network

XFRMR MAGNETIC 1PORT 1:1 10/100

LTST-C150KFKT

LTST-C150KFKT

Lite-On Inc.

LED ORANGE CLEAR 1206 SMD

MAX253CSA+T

MAX253CSA+T

Maxim Integrated

IC DRVR TRANSFORMER 8-SOIC

687ALG025MGBJ

687ALG025MGBJ

Illinois Capacitor

CAP ALUM POLY 680UF 20% 25V T/H

LM7824ACT

LM7824ACT

ON Semiconductor

IC REG LINEAR 24V 1A TO220-3

ATSAMD21G18A-AUT

ATSAMD21G18A-AUT

Microchip Technology

IC MCU 32BIT 256KB FLASH 48TQFP

0452007.MRL

0452007.MRL

Littelfuse

FUSE BRD MNT 7A 72VAC 60VDC 2SMD

E-TEA3717DP

E-TEA3717DP

STMicroelectronics

IC MOTOR DRVR BIPOLAR 16POWERDIP

LM2901M

LM2901M

ON Semiconductor

IC COMPARATOR QUAD 14-SOP

BC560CTA

BC560CTA

ON Semiconductor

TRANS PNP 45V 0.1A TO-92

SBR3U60P1-7

SBR3U60P1-7

Diodes Incorporated

DIODE SBR 60V 3A POWERDI123

WSL1206R0100FEA

WSL1206R0100FEA

Vishay Dale

RES 0.01 OHM 1% 1/4W 1206