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IPP50R399CPHKSA1

IPP50R399CPHKSA1

For Reference Only

Part Number IPP50R399CPHKSA1
PNEDA Part # IPP50R399CPHKSA1
Description MOSFET N-CH 560V 9A TO-220
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,506
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP50R399CPHKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP50R399CPHKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPP50R399CPHKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)560V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs399mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id3.5V @ 330µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds890pF @ 100V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3

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