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IXFB82N60P

IXFB82N60P

For Reference Only

Part Number IXFB82N60P
PNEDA Part # IXFB82N60P
Description MOSFET N-CH 600V 82A PLUS 264
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,960
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 29 - Dec 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFB82N60P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFB82N60P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFB82N60P, IXFB82N60P Datasheet (Total Pages: 5, Size: 101.85 KB)
PDFIXFB82N60P Datasheet Cover
IXFB82N60P Datasheet Page 2 IXFB82N60P Datasheet Page 3 IXFB82N60P Datasheet Page 4 IXFB82N60P Datasheet Page 5

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IXFB82N60P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarHT™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C82A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs75mOhm @ 41A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs240nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds23000pF @ 25V
FET Feature-
Power Dissipation (Max)1250W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePLUS264™
Package / CaseTO-264-3, TO-264AA

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