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IPI90N06S4L04AKSA2

IPI90N06S4L04AKSA2

For Reference Only

Part Number IPI90N06S4L04AKSA2
PNEDA Part # IPI90N06S4L04AKSA2
Description MOSFET N-CH 60V 80A TO262-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,714
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPI90N06S4L04AKSA2 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPI90N06S4L04AKSA2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPI90N06S4L04AKSA2 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.7mOhm @ 90A, 10V
Vgs(th) (Max) @ Id2.2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs170nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds13000pF @ 25V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3-1
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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