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IXBT42N170A

IXBT42N170A

For Reference Only

Part Number IXBT42N170A
PNEDA Part # IXBT42N170A
Description IGBT 1700V 42A 357W TO268
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,616
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXBT42N170A Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXBT42N170A
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXBT42N170A, IXBT42N170A Datasheet (Total Pages: 6, Size: 236.83 KB)
PDFIXBT42N170A Datasheet Cover
IXBT42N170A Datasheet Page 2 IXBT42N170A Datasheet Page 3 IXBT42N170A Datasheet Page 4 IXBT42N170A Datasheet Page 5 IXBT42N170A Datasheet Page 6

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IXBT42N170A Specifications

ManufacturerIXYS
SeriesBIMOSFET™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)42A
Current - Collector Pulsed (Icm)265A
Vce(on) (Max) @ Vge, Ic6V @ 15V, 21A
Power - Max357W
Switching Energy3.43mJ (on), 430µJ (off)
Input TypeStandard
Gate Charge188nC
Td (on/off) @ 25°C19ns/200ns
Test Condition850V, 21A, 1Ohm, 15V
Reverse Recovery Time (trr)330ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device PackageTO-268

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Current - Collector Pulsed (Icm)

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Test Condition

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Manufacturer

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Input Type

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Td (on/off) @ 25°C

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Test Condition

300V, 50A, 13Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

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Infineon Technologies

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Series

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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