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IXBT42N170A Datasheet

IXBT42N170A Datasheet
Total Pages: 6
Size: 236.83 KB
IXYS
This datasheet covers 2 part numbers: IXBT42N170A, IXBH42N170A
IXBT42N170A Datasheet Page 1
IXBT42N170A Datasheet Page 2
IXBT42N170A Datasheet Page 3
IXBT42N170A Datasheet Page 4
IXBT42N170A Datasheet Page 5
IXBT42N170A Datasheet Page 6

Manufacturer

IXYS

Series

BIMOSFET™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1700V

Current - Collector (Ic) (Max)

42A

Current - Collector Pulsed (Icm)

265A

Vce(on) (Max) @ Vge, Ic

6V @ 15V, 21A

Power - Max

357W

Switching Energy

3.43mJ (on), 430µJ (off)

Input Type

Standard

Gate Charge

188nC

Td (on/off) @ 25°C

19ns/200ns

Test Condition

850V, 21A, 1Ohm, 15V

Reverse Recovery Time (trr)

330ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Supplier Device Package

TO-268

Manufacturer

IXYS

Series

BIMOSFET™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1700V

Current - Collector (Ic) (Max)

42A

Current - Collector Pulsed (Icm)

265A

Vce(on) (Max) @ Vge, Ic

6V @ 15V, 21A

Power - Max

357W

Switching Energy

3.43mJ (on), 430µJ (off)

Input Type

Standard

Gate Charge

188nC

Td (on/off) @ 25°C

19ns/200ns

Test Condition

850V, 21A, 1Ohm, 15V

Reverse Recovery Time (trr)

330ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXBH)