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IXBR42N170

IXBR42N170

For Reference Only

Part Number IXBR42N170
PNEDA Part # IXBR42N170
Description IGBT 1700V 57A 200W ISOPLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,878
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXBR42N170 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXBR42N170
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXBR42N170, IXBR42N170 Datasheet (Total Pages: 5, Size: 170.14 KB)
PDFIXBR42N170 Datasheet Cover
IXBR42N170 Datasheet Page 2 IXBR42N170 Datasheet Page 3 IXBR42N170 Datasheet Page 4 IXBR42N170 Datasheet Page 5

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IXBR42N170 Specifications

ManufacturerIXYS
SeriesBIMOSFET™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)57A
Current - Collector Pulsed (Icm)300A
Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 42A
Power - Max200W
Switching Energy-
Input TypeStandard
Gate Charge188nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)1.32µs
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseISOPLUS247™
Supplier Device PackageISOPLUS247™

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Current - Collector (Ic) (Max)

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Vce(on) (Max) @ Vge, Ic

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Renesas Electronics America

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Td (on/off) @ 25°C

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Test Condition

400V, 30A, 5Ohm, 15V

Reverse Recovery Time (trr)

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150°C (TJ)

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Through Hole

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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