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IXBR42N170 Datasheet

IXBR42N170 Datasheet
Total Pages: 5
Size: 170.14 KB
IXYS
This datasheet covers 1 part numbers: IXBR42N170
IXBR42N170 Datasheet Page 1
IXBR42N170 Datasheet Page 2
IXBR42N170 Datasheet Page 3
IXBR42N170 Datasheet Page 4
IXBR42N170 Datasheet Page 5
IXBR42N170

IXYS

Manufacturer

IXYS

Series

BIMOSFET™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1700V

Current - Collector (Ic) (Max)

57A

Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

2.9V @ 15V, 42A

Power - Max

200W

Switching Energy

-

Input Type

Standard

Gate Charge

188nC

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

1.32µs

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

ISOPLUS247™

Supplier Device Package

ISOPLUS247™