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IRLW610ATM

IRLW610ATM

For Reference Only

Part Number IRLW610ATM
PNEDA Part # IRLW610ATM
Description MOSFET N-CH 200V 3.3A I2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,334
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRLW610ATM Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberIRLW610ATM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRLW610ATM, IRLW610ATM Datasheet (Total Pages: 7, Size: 236.05 KB)
PDFIRLW610ATM Datasheet Cover
IRLW610ATM Datasheet Page 2 IRLW610ATM Datasheet Page 3 IRLW610ATM Datasheet Page 4 IRLW610ATM Datasheet Page 5 IRLW610ATM Datasheet Page 6 IRLW610ATM Datasheet Page 7

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IRLW610ATM Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs1.5Ohm @ 1.65A, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds240pF @ 25V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 33W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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