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SIHD9N60E-GE3

SIHD9N60E-GE3

For Reference Only

Part Number SIHD9N60E-GE3
PNEDA Part # SIHD9N60E-GE3
Description MOSFET N-CHANNEL 600V 9A DPAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 24,258
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHD9N60E-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHD9N60E-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHD9N60E-GE3, SIHD9N60E-GE3 Datasheet (Total Pages: 7, Size: 131.18 KB)
PDFSIHD9N60E-GE3 Datasheet Cover
SIHD9N60E-GE3 Datasheet Page 2 SIHD9N60E-GE3 Datasheet Page 3 SIHD9N60E-GE3 Datasheet Page 4 SIHD9N60E-GE3 Datasheet Page 5 SIHD9N60E-GE3 Datasheet Page 6 SIHD9N60E-GE3 Datasheet Page 7

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SIHD9N60E-GE3 Specifications

ManufacturerVishay Siliconix
SeriesE
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs368mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs52nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds778pF @ 100V
FET Feature-
Power Dissipation (Max)78W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-PAK (TO-252AA)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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