Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRLR3103

IRLR3103

For Reference Only

Part Number IRLR3103
PNEDA Part # IRLR3103
Description MOSFET N-CH 30V 55A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,696
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRLR3103 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRLR3103
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRLR3103, IRLR3103 Datasheet (Total Pages: 11, Size: 210.39 KB)
PDFIRLR3103TRR Datasheet Cover
IRLR3103TRR Datasheet Page 2 IRLR3103TRR Datasheet Page 3 IRLR3103TRR Datasheet Page 4 IRLR3103TRR Datasheet Page 5 IRLR3103TRR Datasheet Page 6 IRLR3103TRR Datasheet Page 7 IRLR3103TRR Datasheet Page 8 IRLR3103TRR Datasheet Page 9 IRLR3103TRR Datasheet Page 10 IRLR3103TRR Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRLR3103 Datasheet
  • where to find IRLR3103
  • Infineon Technologies

  • Infineon Technologies IRLR3103
  • IRLR3103 PDF Datasheet
  • IRLR3103 Stock

  • IRLR3103 Pinout
  • Datasheet IRLR3103
  • IRLR3103 Supplier

  • Infineon Technologies Distributor
  • IRLR3103 Price
  • IRLR3103 Distributor

IRLR3103 Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs19mOhm @ 33A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50nC @ 4.5V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds1600pF @ 25V
FET Feature-
Power Dissipation (Max)107W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

SUP50020EL-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.3mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

126nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

11113pF @ 30V

FET Feature

-

Power Dissipation (Max)

375W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

APT56F60B2

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 8™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

110mOhm @ 28A, 10V

Vgs(th) (Max) @ Id

5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

280nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

11300pF @ 25V

FET Feature

-

Power Dissipation (Max)

1040W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

T-MAX™ [B2]

Package / Case

TO-247-3 Variant

FDD8876

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

15A (Ta), 73A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8.2mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

47nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1700pF @ 15V

FET Feature

-

Power Dissipation (Max)

70W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252AA

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

CSD19535KTTT

Texas Instruments

Manufacturer

Series

NexFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

200A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

3.4mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

3.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

98nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7930pF @ 50V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DDPAK/TO-263-3

Package / Case

TO-263-4, D²Pak (3 Leads + Tab), TO-263AA

IRF3205PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

110A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8mOhm @ 62A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

146nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3247pF @ 25V

FET Feature

-

Power Dissipation (Max)

200W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

R5F21335CNFP#30

R5F21335CNFP#30

Renesas Electronics America

IC MCU 16BIT 24KB FLASH 32LQFP

DF10M

DF10M

Diodes Incorporated

BRIDGE RECT 1PHASE 1KV 1A DFM

ST3485EBDR

ST3485EBDR

STMicroelectronics

IC TRANSCEIVER HALF 1/1 8SO

XC7Z020-1CLG400C

XC7Z020-1CLG400C

Xilinx

IC SOC CORTEX-A9 667MHZ 400BGA

IM03GR

IM03GR

TE Connectivity Potter & Brumfield Relays

RELAY TELECOM DPDT 2A 5VDC

PBRC4.00HR50X000

PBRC4.00HR50X000

Kyocera

CER RES 4.0000MHZ 30PF SMD

J201

J201

ON Semiconductor

JFET N-CH 40V 0.625W TO92

DHRB34C102M2FB

DHRB34C102M2FB

Murata

CAP CER 1000PF 15KV RADIAL

1SMB36AT3G

1SMB36AT3G

Littelfuse

TVS DIODE 36V 58.1V SMB

SMAJ36CA

SMAJ36CA

Littelfuse

TVS DIODE 36V 58.1V DO214AC

LTC6993IS6-1#TRMPBF

LTC6993IS6-1#TRMPBF

Linear Technology/Analog Devices

IC MONO MULTIVIBRATOR TSOT23-6

JANTX1N4148-1

JANTX1N4148-1

Microsemi

DIODE GEN PURP 75V 200MA DO35