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BSP299L6327HUSA1

BSP299L6327HUSA1

For Reference Only

Part Number BSP299L6327HUSA1
PNEDA Part # BSP299L6327HUSA1
Description MOSFET N-CH 500V 400MA SOT-223
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,138
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSP299L6327HUSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSP299L6327HUSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSP299L6327HUSA1, BSP299L6327HUSA1 Datasheet (Total Pages: 10, Size: 318.29 KB)
PDFBSP299L6327HUSA1 Datasheet Cover
BSP299L6327HUSA1 Datasheet Page 2 BSP299L6327HUSA1 Datasheet Page 3 BSP299L6327HUSA1 Datasheet Page 4 BSP299L6327HUSA1 Datasheet Page 5 BSP299L6327HUSA1 Datasheet Page 6 BSP299L6327HUSA1 Datasheet Page 7 BSP299L6327HUSA1 Datasheet Page 8 BSP299L6327HUSA1 Datasheet Page 9 BSP299L6327HUSA1 Datasheet Page 10

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BSP299L6327HUSA1 Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds400pF @ 25V
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223-4
Package / CaseTO-261-4, TO-261AA

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