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IRLD110PBF

IRLD110PBF

For Reference Only

Part Number IRLD110PBF
PNEDA Part # IRLD110PBF
Description MOSFET N-CH 100V 1A 4-DIP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 26,364
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRLD110PBF Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRLD110PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRLD110PBF, IRLD110PBF Datasheet (Total Pages: 9, Size: 1,627.76 KB)
PDFIRLD110 Datasheet Cover
IRLD110 Datasheet Page 2 IRLD110 Datasheet Page 3 IRLD110 Datasheet Page 4 IRLD110 Datasheet Page 5 IRLD110 Datasheet Page 6 IRLD110 Datasheet Page 7 IRLD110 Datasheet Page 8 IRLD110 Datasheet Page 9

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IRLD110PBF Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Rds On (Max) @ Id, Vgs540mOhm @ 600mA, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.1nC @ 5V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds250pF @ 25V
FET Feature-
Power Dissipation (Max)1.3W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package4-DIP, Hexdip, HVMDIP
Package / Case4-DIP (0.300", 7.62mm)

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