IRGP6650D-EPBF
For Reference Only
| Part Number | IRGP6650D-EPBF |
| PNEDA Part # | IRGP6650D-EPBF |
| Description | IGBT 600V 50A TO247AD |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 6,480 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IRGP6650D-EPBF Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IRGP6650D-EPBF |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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IRGP6650D-EPBF Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 80A |
| Current - Collector Pulsed (Icm) | 105A |
| Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 35A |
| Power - Max | 306W |
| Switching Energy | 300µJ (on), 630µJ (off) |
| Input Type | Standard |
| Gate Charge | 75nC |
| Td (on/off) @ 25°C | 40ns/105ns |
| Test Condition | 400V, 35A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 50ns |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247AD |
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Manufacturer Microsemi Corporation Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 52A Current - Collector Pulsed (Icm) 104A Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 25A Power - Max 297W Switching Energy 2.8mJ (on), 2.8mJ (off) Input Type Standard Gate Charge 170nC Td (on/off) @ 25°C 25ns/210ns Test Condition - Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 [B] |
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