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IXGQ20N120BD1

IXGQ20N120BD1

For Reference Only

Part Number IXGQ20N120BD1
PNEDA Part # IXGQ20N120BD1
Description IGBT 1200V 40A 190W TO3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,924
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGQ20N120BD1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGQ20N120BD1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGQ20N120BD1, IXGQ20N120BD1 Datasheet (Total Pages: 6, Size: 505.97 KB)
PDFIXGQ20N120BD1 Datasheet Cover
IXGQ20N120BD1 Datasheet Page 2 IXGQ20N120BD1 Datasheet Page 3 IXGQ20N120BD1 Datasheet Page 4 IXGQ20N120BD1 Datasheet Page 5 IXGQ20N120BD1 Datasheet Page 6

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IXGQ20N120BD1 Specifications

ManufacturerIXYS
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)40A
Current - Collector Pulsed (Icm)100A
Vce(on) (Max) @ Vge, Ic3.4V @ 15V, 20A
Power - Max190W
Switching Energy2.1mJ (off)
Input TypeStandard
Gate Charge62nC
Td (on/off) @ 25°C20ns/270ns
Test Condition960V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)40ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 50A

Power - Max

300W

Switching Energy

3.3mJ (off)

Input Type

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Gate Charge

167nC

Td (on/off) @ 25°C

70ns/150ns

Test Condition

480V, 50A, 2.7Ohm, 15V

Reverse Recovery Time (trr)

35ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Series

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

92A

Vce(on) (Max) @ Vge, Ic

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Power - Max

100W

Switching Energy

115µJ (on), 135µJ (off)

Input Type

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Gate Charge

49nC

Td (on/off) @ 25°C

17ns/60ns

Test Condition

300V, 12A, 23Ohm, 15V

Reverse Recovery Time (trr)

60ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

150W

Switching Energy

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Input Type

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65nC

Td (on/off) @ 25°C

15ns/160ns

Test Condition

1360V, 10A, 10Ohm, 15V

Reverse Recovery Time (trr)

360ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Supplier Device Package

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Microsemi

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

32A

Current - Collector Pulsed (Icm)

64A

Vce(on) (Max) @ Vge, Ic

3.2V @ 15V, 15A

Power - Max

200W

Switching Energy

2.7mJ

Input Type

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Gate Charge

95nC

Td (on/off) @ 25°C

17ns/105ns

Test Condition

-

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 [B]

NGTD21T65F2SWK

ON Semiconductor

Manufacturer

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Series

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IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 45A

Power - Max

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Operating Temperature

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Mounting Type

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