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IXGP28N60A3

IXGP28N60A3

For Reference Only

Part Number IXGP28N60A3
PNEDA Part # IXGP28N60A3
Description IGBT
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,856
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGP28N60A3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGP28N60A3
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXGP28N60A3 Specifications

ManufacturerIXYS
SeriesGenX3™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)75A
Current - Collector Pulsed (Icm)170A
Vce(on) (Max) @ Vge, Ic1.4V @ 15V, 24A
Power - Max190W
Switching Energy700µJ (on), 2.4mJ (off)
Input TypeStandard
Gate Charge66nC
Td (on/off) @ 25°C18ns/300ns
Test Condition480V, 24A, 10Ohm, 15V
Reverse Recovery Time (trr)26ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 50A

Power - Max

300W

Switching Energy

3mJ (off)

Input Type

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Gate Charge

200nC

Td (on/off) @ 25°C

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Test Condition

480V, 50A, 2.7Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

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IHW15N120R2

Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

30A

Current - Collector Pulsed (Icm)

45A

Vce(on) (Max) @ Vge, Ic

1.75V @ 15V, 15A

Power - Max

357W

Switching Energy

900µJ (off)

Input Type

Standard

Gate Charge

133nC

Td (on/off) @ 25°C

-/282ns

Test Condition

600V, 15A, 14.8Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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RGS00TS65DHRC11

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

Automotive, AEC-Q101

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

88A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 50A

Power - Max

326W

Switching Energy

1.46mJ (on), 1.29mJ (off)

Input Type

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Gate Charge

58nC

Td (on/off) @ 25°C

36ns/115ns

Test Condition

400V, 50A, 10Ohm, 15V

Reverse Recovery Time (trr)

103ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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Microsemi

Manufacturer

Microsemi Corporation

Series

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IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

93A

Current - Collector Pulsed (Icm)

195A

Vce(on) (Max) @ Vge, Ic

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Power - Max

415W

Switching Energy

755µJ (off)

Input Type

Standard

Gate Charge

235nC

Td (on/off) @ 25°C

16ns/225ns

Test Condition

400V, 50A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247

STGB6NC60HDT4

STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

15A

Current - Collector Pulsed (Icm)

21A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 3A

Power - Max

56W

Switching Energy

20µJ (on), 68µJ (off)

Input Type

Standard

Gate Charge

13.6nC

Td (on/off) @ 25°C

12ns/76ns

Test Condition

390V, 3A, 10Ohm, 15V

Reverse Recovery Time (trr)

21ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

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