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IRG4BC30KD-SPBF

IRG4BC30KD-SPBF

For Reference Only

Part Number IRG4BC30KD-SPBF
PNEDA Part # IRG4BC30KD-SPBF
Description IGBT 600V 28A 100W D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 17,454
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRG4BC30KD-SPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRG4BC30KD-SPBF
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IRG4BC30KD-SPBF Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)28A
Current - Collector Pulsed (Icm)56A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 16A
Power - Max100W
Switching Energy600µJ (on), 580µJ (off)
Input TypeStandard
Gate Charge67nC
Td (on/off) @ 25°C60ns/160ns
Test Condition480V, 16A, 23Ohm, 15V
Reverse Recovery Time (trr)42ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Test Condition

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Mounting Type

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Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Test Condition

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

130µJ (on), 121µJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

400V, 15A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

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ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Reverse Recovery Time (trr)

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