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IRFR9N20DTRR

IRFR9N20DTRR

For Reference Only

Part Number IRFR9N20DTRR
PNEDA Part # IRFR9N20DTRR
Description MOSFET N-CH 200V 9.4A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,506
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFR9N20DTRR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFR9N20DTRR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFR9N20DTRR, IRFR9N20DTRR Datasheet (Total Pages: 11, Size: 132.11 KB)
PDFIRFR9N20DTRR Datasheet Cover
IRFR9N20DTRR Datasheet Page 2 IRFR9N20DTRR Datasheet Page 3 IRFR9N20DTRR Datasheet Page 4 IRFR9N20DTRR Datasheet Page 5 IRFR9N20DTRR Datasheet Page 6 IRFR9N20DTRR Datasheet Page 7 IRFR9N20DTRR Datasheet Page 8 IRFR9N20DTRR Datasheet Page 9 IRFR9N20DTRR Datasheet Page 10 IRFR9N20DTRR Datasheet Page 11

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IRFR9N20DTRR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds560pF @ 25V
FET Feature-
Power Dissipation (Max)86W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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