IRFH4209DTRPBF Datasheet
IRFH4209DTRPBF Datasheet
Total Pages: 9
Size: 494.18 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
IRFH4209DTRPBF
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Manufacturer Infineon Technologies Series FASTIRFET™, HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 44A (Ta), 260A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.1mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4620pF @ 13V FET Feature - Power Dissipation (Max) 3.5W (Ta), 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PQFN (5x6) Package / Case 8-PowerTDFN |
