IRFH3702TR2PBF
For Reference Only
Part Number | IRFH3702TR2PBF |
PNEDA Part # | IRFH3702TR2PBF |
Description | MOSFET N-CH 30V 16A 8PQFN |
Manufacturer | Infineon Technologies |
Unit Price | Request a Quote |
In Stock | 8,316 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IRFH3702TR2PBF Resources
Brand | Infineon Technologies |
ECAD Module | |
Mfr. Part Number | IRFH3702TR2PBF |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IRFH3702TR2PBF Specifications
Manufacturer | Infineon Technologies |
Series | HEXFET® |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 42A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 7.1mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id | 2.35V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 4.5V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1510pF @ 15V |
FET Feature | - |
Power Dissipation (Max) | 2.8W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-PQFN (3x3) |
Package / Case | 8-PowerVDFN |
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