Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFBA1404

IRFBA1404

For Reference Only

Part Number IRFBA1404
PNEDA Part # IRFBA1404
Description MOSFET N-CH 40V 206A SUPER-220
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,102
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFBA1404 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFBA1404
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFBA1404, IRFBA1404 Datasheet (Total Pages: 9, Size: 115.58 KB)
PDFIRFBA1404 Datasheet Cover
IRFBA1404 Datasheet Page 2 IRFBA1404 Datasheet Page 3 IRFBA1404 Datasheet Page 4 IRFBA1404 Datasheet Page 5 IRFBA1404 Datasheet Page 6 IRFBA1404 Datasheet Page 7 IRFBA1404 Datasheet Page 8 IRFBA1404 Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRFBA1404 Datasheet
  • where to find IRFBA1404
  • Infineon Technologies

  • Infineon Technologies IRFBA1404
  • IRFBA1404 PDF Datasheet
  • IRFBA1404 Stock

  • IRFBA1404 Pinout
  • Datasheet IRFBA1404
  • IRFBA1404 Supplier

  • Infineon Technologies Distributor
  • IRFBA1404 Price
  • IRFBA1404 Distributor

IRFBA1404 Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C206A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.7mOhm @ 95A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs200nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7360pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-
Mounting TypeThrough Hole
Supplier Device PackageSUPER-220™ (TO-273AA)
Package / CaseTO-273AA

The Products You May Be Interested In

2SK3906(Q)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

20A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

330mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4250pF @ 25V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P(N)

Package / Case

TO-3P-3, SC-65-3

IRF7779L2TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

375A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

150nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6660pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.3W (Ta), 125W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET L8

Package / Case

DirectFET™ Isometric L8

TK100E10N1,S1X

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVIII-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

100A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

140nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8800pF @ 50V

FET Feature

-

Power Dissipation (Max)

255W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

NTMFS5C682NLT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

21mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2V @ 16µA

Gate Charge (Qg) (Max) @ Vgs

5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

410pF @ 25V

FET Feature

-

Power Dissipation (Max)

28W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads

IRF730SPBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

400V

Current - Continuous Drain (Id) @ 25°C

5.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1Ohm @ 3.3A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

700pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 74W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

SI2300DS-T1-GE3

SI2300DS-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 3.6A SOT-23

XC7Z045-2FFG676I

XC7Z045-2FFG676I

Xilinx

IC SOC CORTEX-A9 800MHZ 676FCBGA

AD842KQ

AD842KQ

Analog Devices

IC OPAMP GP 1 CIRCUIT 14CERDIP

MAX811SEUS-T

MAX811SEUS-T

Maxim Integrated

IC MPU V-MONITOR 2.93V SOT143-4

1812L160/12DR

1812L160/12DR

Littelfuse

PTC RESET FUSE 12V 1.6A 1812

AD8062ARZ

AD8062ARZ

Analog Devices

IC OPAMP VFB 2 CIRCUIT 8SOIC

EPM1270F256C5N

EPM1270F256C5N

Intel

IC CPLD 980MC 6.2NS 256FBGA

MAX3160CAP+

MAX3160CAP+

Maxim Integrated

IC TRANSCEIVER FULL 2/2 20SSOP

SMBJ18CA-E3/52

SMBJ18CA-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 18V 29.2V DO214AA

SSM2166SZ

SSM2166SZ

Analog Devices

IC PREAMP AUDIO MONO MIC 14SOIC

PESD12VS1UB,115

PESD12VS1UB,115

Nexperia

TVS DIODE 12V 35V SOD523

ADN4662BRZ

ADN4662BRZ

Analog Devices

IC RECEIVER 0/1 8SOIC