IRFBA1404 Datasheet
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 206A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.7mOhm @ 95A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7360pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature - Mounting Type Through Hole Supplier Device Package SUPER-220™ (TO-273AA) Package / Case TO-273AA |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 206A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.7mOhm @ 95A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7360pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package SUPER-220™ (TO-273AA) Package / Case TO-273AA |
