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IRF9Z24NLPBF

IRF9Z24NLPBF

For Reference Only

Part Number IRF9Z24NLPBF
PNEDA Part # IRF9Z24NLPBF
Description MOSFET P-CH 55V 12A TO-262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,406
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF9Z24NLPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF9Z24NLPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF9Z24NLPBF, IRF9Z24NLPBF Datasheet (Total Pages: 11, Size: 389.52 KB)
PDFIRF9Z24NSPBF Datasheet Cover
IRF9Z24NSPBF Datasheet Page 2 IRF9Z24NSPBF Datasheet Page 3 IRF9Z24NSPBF Datasheet Page 4 IRF9Z24NSPBF Datasheet Page 5 IRF9Z24NSPBF Datasheet Page 6 IRF9Z24NSPBF Datasheet Page 7 IRF9Z24NSPBF Datasheet Page 8 IRF9Z24NSPBF Datasheet Page 9 IRF9Z24NSPBF Datasheet Page 10 IRF9Z24NSPBF Datasheet Page 11

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IRF9Z24NLPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs175mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds350pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 45W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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