Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRF7807PBF

IRF7807PBF

For Reference Only

Part Number IRF7807PBF
PNEDA Part # IRF7807PBF
Description MOSFET N-CH 30V 8.3A 8-SOIC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,708
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 19 - Feb 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF7807PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF7807PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRF7807PBF Datasheet
  • where to find IRF7807PBF
  • Infineon Technologies

  • Infineon Technologies IRF7807PBF
  • IRF7807PBF PDF Datasheet
  • IRF7807PBF Stock

  • IRF7807PBF Pinout
  • Datasheet IRF7807PBF
  • IRF7807PBF Supplier

  • Infineon Technologies Distributor
  • IRF7807PBF Price
  • IRF7807PBF Distributor

IRF7807PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V
Rds On (Max) @ Id, Vgs25mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)2.5W (Tc)
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

The Products You May Be Interested In

Manufacturer

IXYS

Series

TrenchT4™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

340A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.9mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

256nC @ 10V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

13000pF @ 25V

FET Feature

-

Power Dissipation (Max)

480W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

SSM6K211FE,LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSIII

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

47mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

10.8nC @ 4.5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

510pF @ 10V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

ES6

Package / Case

SOT-563, SOT-666

NVMFS5C646NLWFT3G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

20A (Ta), 93A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.7mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

33.7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2164pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 79W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN

NTMSD2P102R2

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

90mOhm @ 2.4A, 4.5V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

18nC @ 4.5V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

750pF @ 16V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

FQU5N60CTU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

2.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.5Ohm @ 1.4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

670pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 49W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Recently Sold

D5V0L4B5SO-7

D5V0L4B5SO-7

Diodes Incorporated

TVS DIODE 5V 14V SOT353

MMBT5551LT1G

MMBT5551LT1G

ON Semiconductor

TRANS NPN 160V 0.6A SOT23

NLAS4599DFT2G

NLAS4599DFT2G

ON Semiconductor

IC SWITCH SPDT SC88

0451.500MRL

0451.500MRL

Littelfuse

FUSE BOARD MNT 500MA 125VAC/VDC

MPC8306SVMADDCA

MPC8306SVMADDCA

NXP

IC MPU MPC83XX 266MHZ 369BGA

ACF451832-153-TD01

ACF451832-153-TD01

TDK

FILTER LC(T) SMD

OP07CSZ

OP07CSZ

Analog Devices

IC OPAMP GP 1 CIRCUIT 8SOIC

SMBJ5.0CA-13-F

SMBJ5.0CA-13-F

Diodes Incorporated

TVS DIODE 5V 9.2V SMB

NC7SZ04P5X

NC7SZ04P5X

ON Semiconductor

IC INVERTER 1CH 1-INP SC70-5

MPSA70RLRMG

MPSA70RLRMG

ON Semiconductor

TRANS PNP 40V 0.1A TO-92

4N32SM

4N32SM

ON Semiconductor

OPTOISO 4.17KV DARL W/BASE 6SMD

PEX8603-AB50NI G

PEX8603-AB50NI G

Broadcom

IC PCI EXPRESS SWITCH 136AQFN