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IRF7706TR

IRF7706TR

For Reference Only

Part Number IRF7706TR
PNEDA Part # IRF7706TR
Description MOSFET P-CH 30V 7A 8-TSSOP
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,886
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF7706TR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF7706TR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF7706TR, IRF7706TR Datasheet (Total Pages: 8, Size: 152.97 KB)
PDFIRF7706TR Datasheet Cover
IRF7706TR Datasheet Page 2 IRF7706TR Datasheet Page 3 IRF7706TR Datasheet Page 4 IRF7706TR Datasheet Page 5 IRF7706TR Datasheet Page 6 IRF7706TR Datasheet Page 7 IRF7706TR Datasheet Page 8

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IRF7706TR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs22mOhm @ 7A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs72nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2211pF @ 25V
FET Feature-
Power Dissipation (Max)1.51W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-TSSOP
Package / Case8-TSSOP (0.173", 4.40mm Width)

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