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FQAF10N80

FQAF10N80

For Reference Only

Part Number FQAF10N80
PNEDA Part # FQAF10N80
Description MOSFET N-CH 800V 6.7A TO-3PF
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,124
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQAF10N80 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQAF10N80
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQAF10N80, FQAF10N80 Datasheet (Total Pages: 8, Size: 700.25 KB)
PDFFQAF10N80 Datasheet Cover
FQAF10N80 Datasheet Page 2 FQAF10N80 Datasheet Page 3 FQAF10N80 Datasheet Page 4 FQAF10N80 Datasheet Page 5 FQAF10N80 Datasheet Page 6 FQAF10N80 Datasheet Page 7 FQAF10N80 Datasheet Page 8

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FQAF10N80 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.05Ohm @ 3.35A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs71nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2700pF @ 25V
FET Feature-
Power Dissipation (Max)113W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PF
Package / CaseTO-3P-3 Full Pack

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