IRF7663TRPBF
For Reference Only
Part Number | IRF7663TRPBF |
PNEDA Part # | IRF7663TRPBF |
Description | MOSFET P-CH 20V 8.2A MICRO8 |
Manufacturer | Infineon Technologies |
Unit Price | Request a Quote |
In Stock | 6,102 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 25 - Nov 30 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
IRF7663TRPBF Resources
Brand | Infineon Technologies |
ECAD Module | |
Mfr. Part Number | IRF7663TRPBF |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IRF7663TRPBF Datasheet
- where to find IRF7663TRPBF
- Infineon Technologies
- Infineon Technologies IRF7663TRPBF
- IRF7663TRPBF PDF Datasheet
- IRF7663TRPBF Stock
- IRF7663TRPBF Pinout
- Datasheet IRF7663TRPBF
- IRF7663TRPBF Supplier
- Infineon Technologies Distributor
- IRF7663TRPBF Price
- IRF7663TRPBF Distributor
IRF7663TRPBF Specifications
Manufacturer | Infineon Technologies |
Series | HEXFET® |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 20mOhm @ 7A, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 45nC @ 5V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 2520pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 1.8W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Micro8™ |
Package / Case | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
The Products You May Be Interested In
Microsemi Manufacturer Microsemi Corporation Series POWER MOS 8™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 57A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 110mOhm @ 43A, 10V Vgs(th) (Max) @ Id 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs 570nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 17550pF @ 25V FET Feature - Power Dissipation (Max) 960W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package ISOTOP® Package / Case SOT-227-4, miniBLOC |
Infineon Technologies Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 56A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9.5mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.25V @ 25µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 15V FET Feature - Power Dissipation (Max) 50W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Nexperia Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 350mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V FET Feature - Power Dissipation (Max) 370mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236AB Package / Case TO-236-3, SC-59, SOT-23-3 |
Vishay Siliconix Manufacturer Vishay Siliconix Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 9.9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 280mOhm @ 5.7A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V FET Feature - Power Dissipation (Max) 42W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Alpha & Omega Semiconductor Manufacturer Alpha & Omega Semiconductor Inc. Series AlphaSGT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 16.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.5mOhm @ 16.5A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1652pF @ 30V FET Feature - Power Dissipation (Max) 3.1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |