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SI1072X-T1-GE3

SI1072X-T1-GE3

For Reference Only

Part Number SI1072X-T1-GE3
PNEDA Part # SI1072X-T1-GE3
Description MOSFET N-CH 30V SC89
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,254
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 18 - Apr 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1072X-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1072X-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI1072X-T1-GE3, SI1072X-T1-GE3 Datasheet (Total Pages: 6, Size: 90.1 KB)
PDFSI1072X-T1-GE3 Datasheet Cover
SI1072X-T1-GE3 Datasheet Page 2 SI1072X-T1-GE3 Datasheet Page 3 SI1072X-T1-GE3 Datasheet Page 4 SI1072X-T1-GE3 Datasheet Page 5 SI1072X-T1-GE3 Datasheet Page 6

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SI1072X-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs93mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.3nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds280pF @ 15V
FET Feature-
Power Dissipation (Max)236mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-89-6
Package / CaseSOT-563, SOT-666

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