Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRF7521D1

IRF7521D1

For Reference Only

Part Number IRF7521D1
PNEDA Part # IRF7521D1
Description MOSFET N-CH 20V 2.4A MICRO-8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,074
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF7521D1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF7521D1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF7521D1, IRF7521D1 Datasheet (Total Pages: 8, Size: 177.92 KB)
PDFIRF7521D1TR Datasheet Cover
IRF7521D1TR Datasheet Page 2 IRF7521D1TR Datasheet Page 3 IRF7521D1TR Datasheet Page 4 IRF7521D1TR Datasheet Page 5 IRF7521D1TR Datasheet Page 6 IRF7521D1TR Datasheet Page 7 IRF7521D1TR Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRF7521D1 Datasheet
  • where to find IRF7521D1
  • Infineon Technologies

  • Infineon Technologies IRF7521D1
  • IRF7521D1 PDF Datasheet
  • IRF7521D1 Stock

  • IRF7521D1 Pinout
  • Datasheet IRF7521D1
  • IRF7521D1 Supplier

  • Infineon Technologies Distributor
  • IRF7521D1 Price
  • IRF7521D1 Distributor

IRF7521D1 Specifications

ManufacturerInfineon Technologies
SeriesFETKY™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.7V, 4.5V
Rds On (Max) @ Id, Vgs135mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs8nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds260pF @ 15V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)1.3W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMicro8™
Package / Case8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

The Products You May Be Interested In

5HN01M-TL-H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

100mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

7.5Ohm @ 50mA, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

1.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6.2pF @ 10V

FET Feature

-

Power Dissipation (Max)

150mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

3-MCP

Package / Case

SC-70, SOT-323

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

31nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4300pF @ 12V

FET Feature

-

Power Dissipation (Max)

104W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669

EPC2018

EPC

Manufacturer

EPC

Series

eGaN®

FET Type

N-Channel

Technology

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

12A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

25mOhm @ 6A, 5V

Vgs(th) (Max) @ Id

2.5V @ 3mA

Gate Charge (Qg) (Max) @ Vgs

7.5nC @ 5V

Vgs (Max)

+6V, -5V

Input Capacitance (Ciss) (Max) @ Vds

540pF @ 100V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-40°C ~ 125°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Die

Package / Case

Die

TSM080N03PQ56 RLG

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

73A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

843pF @ 15V

FET Feature

-

Power Dissipation (Max)

69W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PDFN (5x6)

Package / Case

8-PowerTDFN

IPU04N03LB G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 70µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5200pF @ 15V

FET Feature

-

Power Dissipation (Max)

115W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

P-TO251-3-1

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Recently Sold

ABM3B-25.000MHZ-B2-T

ABM3B-25.000MHZ-B2-T

Abracon

CRYSTAL 25.0000MHZ 18PF SMD

LXES2SBBB4-026

LXES2SBBB4-026

Murata Electronics

TVS DIODE 5.5VWM SMD

DLW5BTN101SQ2L

DLW5BTN101SQ2L

Murata

CMC 6A 2LN 100 OHM SMD

DS5000-32-16+

DS5000-32-16+

Maxim Integrated

IC MCU 8BIT 32KB NVSRAM 40EDIP

AT24RF08CN-10SC

AT24RF08CN-10SC

Microchip Technology

IC EEPROM 8K I2C 100KHZ 8SOIC

EPCQ64SI16N

EPCQ64SI16N

Intel

IC CONFIG DEVICE 64MBIT 16SOIC

IXGA20N120A3

IXGA20N120A3

IXYS

IGBT 1200V 40A 180W TO263

PIC16F18323-I/SL

PIC16F18323-I/SL

Microchip Technology

IC MCU 8BIT 3.5KB FLASH 14SOIC

IS82C52

IS82C52

Renesas Electronics America Inc.

IC PERIPH UART/BRG 16MHZ 28-PLCC

A42MX09-PQ100

A42MX09-PQ100

Microsemi

IC FPGA 83 I/O 100QFP

17-21SURC/S530-A3/TR8

17-21SURC/S530-A3/TR8

Everlight Electronics Co Ltd

LED RED CLEAR SMD

MAX3078EESA+T

MAX3078EESA+T

Maxim Integrated

IC TRANSCEIVER HALF 1/1 8SOIC