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IRF7471PBF

IRF7471PBF

For Reference Only

Part Number IRF7471PBF
PNEDA Part # IRF7471PBF
Description MOSFET N-CH 40V 10A 8-SOIC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,426
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF7471PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF7471PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF7471PBF, IRF7471PBF Datasheet (Total Pages: 8, Size: 124.15 KB)
PDFIRF7471PBF Datasheet Cover
IRF7471PBF Datasheet Page 2 IRF7471PBF Datasheet Page 3 IRF7471PBF Datasheet Page 4 IRF7471PBF Datasheet Page 5 IRF7471PBF Datasheet Page 6 IRF7471PBF Datasheet Page 7 IRF7471PBF Datasheet Page 8

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IRF7471PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs32nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2820pF @ 20V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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