Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NTD65N03R-1G

NTD65N03R-1G

For Reference Only

Part Number NTD65N03R-1G
PNEDA Part # NTD65N03R-1G
Description MOSFET N-CH 25V 9.5A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,302
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTD65N03R-1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTD65N03R-1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTD65N03R-1G, NTD65N03R-1G Datasheet (Total Pages: 8, Size: 73.88 KB)
PDFNTD65N03RT4G Datasheet Cover
NTD65N03RT4G Datasheet Page 2 NTD65N03RT4G Datasheet Page 3 NTD65N03RT4G Datasheet Page 4 NTD65N03RT4G Datasheet Page 5 NTD65N03RT4G Datasheet Page 6 NTD65N03RT4G Datasheet Page 7 NTD65N03RT4G Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NTD65N03R-1G Datasheet
  • where to find NTD65N03R-1G
  • ON Semiconductor

  • ON Semiconductor NTD65N03R-1G
  • NTD65N03R-1G PDF Datasheet
  • NTD65N03R-1G Stock

  • NTD65N03R-1G Pinout
  • Datasheet NTD65N03R-1G
  • NTD65N03R-1G Supplier

  • ON Semiconductor Distributor
  • NTD65N03R-1G Price
  • NTD65N03R-1G Distributor

NTD65N03R-1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C9.5A (Ta), 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1400pF @ 20V
FET Feature-
Power Dissipation (Max)1.3W (Ta), 50W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

The Products You May Be Interested In

ZVP4424ASTZ

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

240V

Current - Continuous Drain (Id) @ 25°C

200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

3.5V, 10V

Rds On (Max) @ Id, Vgs

9Ohm @ 200mA, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±40V

Input Capacitance (Ciss) (Max) @ Vds

200pF @ 25V

FET Feature

-

Power Dissipation (Max)

750mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

E-Line (TO-92 compatible)

Package / Case

E-Line-3

IRFU7546PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®, StrongIRFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

56A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

7.9mOhm @ 43A, 10V

Vgs(th) (Max) @ Id

3.7V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

87nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3020pF @ 25V

FET Feature

-

Power Dissipation (Max)

99W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

IPAK (TO-251)

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

NTP52N10

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

60A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

30mOhm @ 26A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

135nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3150pF @ 25V

FET Feature

-

Power Dissipation (Max)

214W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

AOK20S60L

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

aMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

199mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19.8nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1038pF @ 100V

FET Feature

-

Power Dissipation (Max)

266W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

IPI80N06S2L11AKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

2V @ 93µA

Gate Charge (Qg) (Max) @ Vgs

80nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2075pF @ 25V

FET Feature

-

Power Dissipation (Max)

158W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Recently Sold

0001.2536

0001.2536

Schurter

FUSE CER 16A 250VAC 63VDC 3AB

W681360WG

W681360WG

Nuvoton Technology

IC VOICEBND CODEC 3V 1CH 20TSSOP

SMBJ5.0CA

SMBJ5.0CA

TVS DIODE 5V 9.2V SMB

AT43USB355E-AC

AT43USB355E-AC

Microchip Technology

IC USB MCU W/HUB,ADC,PWM 64LQFP

EMVY500ADA101MHA0G

EMVY500ADA101MHA0G

United Chemi-Con

CAP ALUM 100UF 20% 50V SMD

OD-850FHT

OD-850FHT

Opto Diode Corp

EMITTER IR 850NM 100MA TO-46

687ALG025MGBJ

687ALG025MGBJ

Illinois Capacitor

CAP ALUM POLY 680UF 20% 25V T/H

LTC3780EG#PBF

LTC3780EG#PBF

Linear Technology/Analog Devices

IC REG CTRLR BUCK-BOOST 24SSOP

MIC2544A-1YMM

MIC2544A-1YMM

Microchip Technology

IC SW CURR LIMIT HI SIDE 8MSOP

BC560CTA

BC560CTA

ON Semiconductor

TRANS PNP 45V 0.1A TO-92

AS4C256M16D3B-12BIN

AS4C256M16D3B-12BIN

Alliance Memory, Inc.

IC DRAM 4G PARALLEL 96FBGA

DMN6075S-7

DMN6075S-7

Diodes Incorporated

MOSFET N-CH 60V 2A SOT23-3