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IRF6706S2TRPBF

IRF6706S2TRPBF

For Reference Only

Part Number IRF6706S2TRPBF
PNEDA Part # IRF6706S2TRPBF
Description MOSFET N-CH 25V DIRECTFET S1
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,236
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF6706S2TRPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF6706S2TRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF6706S2TRPBF, IRF6706S2TRPBF Datasheet (Total Pages: 10, Size: 255.59 KB)
PDFIRF6706S2TRPBF Datasheet Cover
IRF6706S2TRPBF Datasheet Page 2 IRF6706S2TRPBF Datasheet Page 3 IRF6706S2TRPBF Datasheet Page 4 IRF6706S2TRPBF Datasheet Page 5 IRF6706S2TRPBF Datasheet Page 6 IRF6706S2TRPBF Datasheet Page 7 IRF6706S2TRPBF Datasheet Page 8 IRF6706S2TRPBF Datasheet Page 9 IRF6706S2TRPBF Datasheet Page 10

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IRF6706S2TRPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C17A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.8mOhm @ 17A, 10V
Vgs(th) (Max) @ Id2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1810pF @ 13V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 26W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET S1
Package / CaseDirectFET™ Isometric S1

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