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IRF6678TR1

IRF6678TR1

For Reference Only

Part Number IRF6678TR1
PNEDA Part # IRF6678TR1
Description MOSFET N-CH 30V 30A DIRECTFET
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,874
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF6678TR1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF6678TR1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF6678TR1, IRF6678TR1 Datasheet (Total Pages: 9, Size: 253.31 KB)
PDFIRF6678TR1 Datasheet Cover
IRF6678TR1 Datasheet Page 2 IRF6678TR1 Datasheet Page 3 IRF6678TR1 Datasheet Page 4 IRF6678TR1 Datasheet Page 5 IRF6678TR1 Datasheet Page 6 IRF6678TR1 Datasheet Page 7 IRF6678TR1 Datasheet Page 8 IRF6678TR1 Datasheet Page 9

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IRF6678TR1 Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C30A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs65nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5640pF @ 15V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 89W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ MX
Package / CaseDirectFET™ Isometric MX

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