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SIR622DP-T1-RE3

SIR622DP-T1-RE3

For Reference Only

Part Number SIR622DP-T1-RE3
PNEDA Part # SIR622DP-T1-RE3
Description N-CHANNEL 150-V (D-S) MOSFET
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,344
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIR622DP-T1-RE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIR622DP-T1-RE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIR622DP-T1-RE3, SIR622DP-T1-RE3 Datasheet (Total Pages: 13, Size: 417.57 KB)
PDFSIR622DP-T1-RE3 Datasheet Cover
SIR622DP-T1-RE3 Datasheet Page 2 SIR622DP-T1-RE3 Datasheet Page 3 SIR622DP-T1-RE3 Datasheet Page 4 SIR622DP-T1-RE3 Datasheet Page 5 SIR622DP-T1-RE3 Datasheet Page 6 SIR622DP-T1-RE3 Datasheet Page 7 SIR622DP-T1-RE3 Datasheet Page 8 SIR622DP-T1-RE3 Datasheet Page 9 SIR622DP-T1-RE3 Datasheet Page 10 SIR622DP-T1-RE3 Datasheet Page 11

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SIR622DP-T1-RE3 Specifications

ManufacturerVishay Siliconix
SeriesThunderFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C12.6A (Ta), 51.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs17.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs41nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1516pF @ 75V
FET Feature-
Power Dissipation (Max)6.25W (Ta), 104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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