IRF6629TR1PBF
For Reference Only
| Part Number | IRF6629TR1PBF |
| PNEDA Part # | IRF6629TR1PBF |
| Description | MOSFET N-CH 25V 29A DIRECTFET |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 5,904 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IRF6629TR1PBF Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IRF6629TR1PBF |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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Logistics Mode
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IRF6629TR1PBF Specifications
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 29A (Ta), 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 29A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 51nC @ 4.5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4260pF @ 13V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 100W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DIRECTFET™ MX |
| Package / Case | DirectFET™ Isometric MX |
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Manufacturer Rohm Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 1.4Ohm @ 250mA, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 30pF @ 10V FET Feature - Power Dissipation (Max) 200mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package UMT3 Package / Case SC-70, SOT-323 |
Manufacturer STMicroelectronics Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
