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IRF6604TR1

IRF6604TR1

For Reference Only

Part Number IRF6604TR1
PNEDA Part # IRF6604TR1
Description MOSFET N-CH 30V 12A DIRECTFET
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,986
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 5 - Apr 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF6604TR1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF6604TR1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF6604TR1, IRF6604TR1 Datasheet (Total Pages: 11, Size: 206.18 KB)
PDFIRF6604TR1 Datasheet Cover
IRF6604TR1 Datasheet Page 2 IRF6604TR1 Datasheet Page 3 IRF6604TR1 Datasheet Page 4 IRF6604TR1 Datasheet Page 5 IRF6604TR1 Datasheet Page 6 IRF6604TR1 Datasheet Page 7 IRF6604TR1 Datasheet Page 8 IRF6604TR1 Datasheet Page 9 IRF6604TR1 Datasheet Page 10 IRF6604TR1 Datasheet Page 11

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IRF6604TR1 Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C12A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 7V
Rds On (Max) @ Id, Vgs11.5mOhm @ 12A, 7V
Vgs(th) (Max) @ Id2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs26nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds2270pF @ 15V
FET Feature-
Power Dissipation (Max)2.3W (Ta), 42W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ MQ
Package / CaseDirectFET™ Isometric MQ

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