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IRF6603TR1

IRF6603TR1

For Reference Only

Part Number IRF6603TR1
PNEDA Part # IRF6603TR1
Description MOSFET N-CH 30V 27A DIRECTFET
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,052
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF6603TR1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF6603TR1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF6603TR1, IRF6603TR1 Datasheet (Total Pages: 11, Size: 204.78 KB)
PDFIRF6603TR1 Datasheet Cover
IRF6603TR1 Datasheet Page 2 IRF6603TR1 Datasheet Page 3 IRF6603TR1 Datasheet Page 4 IRF6603TR1 Datasheet Page 5 IRF6603TR1 Datasheet Page 6 IRF6603TR1 Datasheet Page 7 IRF6603TR1 Datasheet Page 8 IRF6603TR1 Datasheet Page 9 IRF6603TR1 Datasheet Page 10 IRF6603TR1 Datasheet Page 11

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IRF6603TR1 Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C27A (Ta), 92A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs72nC @ 4.5V
Vgs (Max)+20V, -12V
Input Capacitance (Ciss) (Max) @ Vds6590pF @ 15V
FET Feature-
Power Dissipation (Max)3.6W (Ta), 42W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ MT
Package / CaseDirectFET™ Isometric MT

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