Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRF5305PBF

IRF5305PBF

For Reference Only

Part Number IRF5305PBF
PNEDA Part # IRF5305PBF
Description MOSFET P-CH 55V 31A TO-220AB
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 28,440
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF5305PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF5305PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRF5305PBF Datasheet
  • where to find IRF5305PBF
  • Infineon Technologies

  • Infineon Technologies IRF5305PBF
  • IRF5305PBF PDF Datasheet
  • IRF5305PBF Stock

  • IRF5305PBF Pinout
  • Datasheet IRF5305PBF
  • IRF5305PBF Supplier

  • Infineon Technologies Distributor
  • IRF5305PBF Price
  • IRF5305PBF Distributor

IRF5305PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs60mOhm @ 16A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs63nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1200pF @ 25V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

RJL5014DPK-00#T0

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

19A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

400mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

43nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1700pF @ 25V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

AOD4454

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

3A (Ta), 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7V, 10V

Rds On (Max) @ Id, Vgs

94mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

985pF @ 75V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 100W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

SI1072X-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

93mOhm @ 1.3A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

280pF @ 15V

FET Feature

-

Power Dissipation (Max)

236mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-89-6

Package / Case

SOT-563, SOT-666

IRLZ14STRRPBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 5V

Rds On (Max) @ Id, Vgs

200mOhm @ 6A, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.4nC @ 5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

400pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 43W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRF2807ZSPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

9.4mOhm @ 53A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3270pF @ 25V

FET Feature

-

Power Dissipation (Max)

170W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

ADN4662BRZ

ADN4662BRZ

Analog Devices

IC RECEIVER 0/1 8SOIC

UCLAMP2804L.TCT

UCLAMP2804L.TCT

Semtech

TVS DIODE 2.8V 10V 8SOIC

XC7Z045-2FFG676I

XC7Z045-2FFG676I

Xilinx

IC SOC CORTEX-A9 800MHZ 676FCBGA

STGW45HF60WDI

STGW45HF60WDI

STMicroelectronics

IGBT 600V 70A 250W TO247

NC7SZ00P5X

NC7SZ00P5X

ON Semiconductor

IC GATE NAND 1CH 2-INP SC70-5

TSM2323CX RFG

TSM2323CX RFG

Taiwan Semiconductor Corporation

MOSFET P-CHANNEL 20V 4.7A SOT23

AD8062ARZ

AD8062ARZ

Analog Devices

IC OPAMP VFB 2 CIRCUIT 8SOIC

DMN32D2LV-7

DMN32D2LV-7

Diodes Incorporated

MOSFET 2N-CH 30V 0.4A SOT-563

ADG5419BRMZ

ADG5419BRMZ

Analog Devices

IC SWITCH SINGLE SPDT 8MSOP

BC81725MTF

BC81725MTF

ON Semiconductor

TRANS NPN 45V 0.8A SOT-23

B39162B4300F210

B39162B4300F210

Qualcomm

FILTER SAW 1.575GHZ 5SMD

ACF451832-153-TD01

ACF451832-153-TD01

TDK

FILTER LC(T) SMD